Experimental investigations of monolithic IGBT transistor acoustic emission phenomena

Maritime University of Szczecin, Faculty of Marine Engineering, 70-500 Szczecin, Poland

^* Corresponding author: R.Gordon@AM.Szczecin.pl

Abstract

Many recent researches are focused on the diagnostic methods allowing determination of the condition of working semiconductor components (power transistors, diodes etc.). As any solid material under stresses (mechanical, temperature and electrical) the semiconductors are generating elastic waves in the case of changing conductivity state. Based on the results of experimental research, a correlation can be observed between the transition between the on and off states of a single IGBT transistor and the emitted acoustic signal. Acquisition of acoustic emission signals was obtained with use of a wide band acoustic emission sensor. The received signal initially was prepared by AD input card with amplifier and then were recorded by means of a computer software. Acquired data were exported the to a file, which enabled further processing of the measured signals. The aim of the study was to determine the acoustic emission background signal coming from switching IGBT transistor and preparation of frequency response. The results of analysis will be used as a reference point for a further investigation of early-stage faults of semiconductors elements.