Issue |
ITM Web Conf.
Volume 30, 2019
29th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
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Article Number | 14004 | |
Number of page(s) | 7 | |
Section | Photonics and Radiophotonics (8b) | |
DOI | https://doi.org/10.1051/itmconf/20193014004 | |
Published online | 27 November 2019 |
Heterostructure InGaAlAs/InAlAs on the InP substrate for the electro-optical modulator based on the quantum confined Stark effect
1 Rzhanov Institute of Semiconductor Physics, Lavrentiev av. 13, Novosibirsk, 630090, Russia
2 Novosibirsk State University, st. Pirogova 2, Novosibirsk, 630090, Russia
* Corresponding author: gulvaev@isp.nsc.ru
The energy structure and the value of the electrooptic effect in heteroepitaxial structures (HES) with multiple InGaAlAs / InAlAs quantum wells have been studied. The interferometric method has been developed to determine small changes in the refractive index under transverse transmission of light through a layered structure. The length of the Mach-Zehnder interferometer for the modulator at HES with multiple InGaAlAs / InAlAs quantum wells has been chosen.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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