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Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation

Ivan Lovshenko, Veranika Khanko and Viktor Stempitsky

ITM Web Conf., 30 (2019) 10002

Published online: 27 November 2019

DOI: 10.1051/itmconf/20193010002

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