ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||8|
|Section||Resistance to Radiation & Electromagnetic-Pulse Damages (6a)|
|Published online||27 November 2019|
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
1 Micro- and nanoel. dept., Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus, firstname.lastname@example.org
2 Research Laboratory 4.4, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus, email@example.com
3 R&D Department, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus, firstname.lastname@example.org
* Corresponding author: email@example.com
The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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