ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||7|
|Section||Resistance to Radiation & Electromagnetic-Pulse Damages (6a)|
|Published online||27 November 2019|
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process
1 National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Kashirskoe shosse 31, Russian Federation
2 Specialized Electronic Systems, 115409, Moscow, Kashirskoe shosse 31, Russian Federation
* Corresponding author: firstname.lastname@example.org
The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work. The amplifier with an operating frequency range from 0.1 GHz to 3.5 GHz, gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm is designed, produced and measured. The characteristic property of the amplifier is a single positive supply voltage and extended frequency range up to 100 MHz provided by the external capacitor circuit. Transient radiation effects in the amplifier are investigated up to the dose rate value of 4.9·109 a.u./s. The recovery time does not exceed 4 μs according to the experimental results.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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