| Issue |
ITM Web Conf.
Volume 30, 2019
29th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|
|
|---|---|---|
| Article Number | 10004 | |
| Number of page(s) | 4 | |
| Section | Resistance to Radiation & Electromagnetic-Pulse Damages (6a) | |
| DOI | https://doi.org/10.1051/itmconf/20193010004 | |
| Published online | 27 November 2019 | |
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process
1 National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, 115409 Moscow, Russian Federation
2 Specialized Electronic Systems, Kashirskoe shosse 31, 115409 Moscow, Russian Federation
* Corresponding author: nausach@spels.ru
The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional upset.
© The Authors, published by EDP Sciences, 2019
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