ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||4|
|Section||Resistance to Radiation & Electromagnetic-Pulse Damages (6a)|
|Published online||27 November 2019|
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process
1 National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, 115409 Moscow, Russian Federation
2 Specialized Electronic Systems, Kashirskoe shosse 31, 115409 Moscow, Russian Federation
* Corresponding author: email@example.com
The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional upset.
© The Authors, published by EDP Sciences, 2019
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