ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||4|
|Section||Resistance to Radiation & Electromagnetic-Pulse Damages (6a)|
|Published online||27 November 2019|
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation
National Research Nuclear University MEPhI, 115409, Moscow, Russian Federation
* Corresponding author: DVGromov@mephi.ru
The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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