ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||3|
|Section||Solid State and Microwave Devices (1)|
|Published online||27 November 2019|
400 GHz electromagnetic radiation sources based on IMPATT diodes
1 State Research Institute «Orion», 03680, Kiev, Ukraine
2 MSU, Physics Department, 119991, Moscow, Russian Federation
3 RTD «Radiotechnika», 127083, Moscow, Russian Federation
* Corresponding author: email@example.com
The results of research on the creation and development of microwave radiation sources in the long-wave part of the terahertz range (100-400 GHz) using double-drift impact avalanche and transit-time diodes (IMPATT diodes) are presented. Minimum contour losses and maximum output power of low impedance IMPATT diodes are achieved in the oscillatory system on the open radial transmission feeder. Equivalent circuits of generators are considered, and electrophysical parameters of IMPATT structures are given. Schemes of designs of microwave radiation sources and their main parameters are given.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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