Issue |
ITM Web Conf.
Volume 30, 2019
29th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
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Article Number | 01004 | |
Number of page(s) | 6 | |
Section | Solid State and Microwave Devices (1) | |
DOI | https://doi.org/10.1051/itmconf/20193001004 | |
Published online | 27 November 2019 |
A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz
SevSU Engineering Center Ltd, Sevastopol State University, Sevastopol, Russia
* Corresponding author: vadim.budnyaev@yandex.ru
This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to 87 GHz. S11 is better than 11 dB. The simulated input 1 dB compression point is –23 dBm at 80 GHz with low power consumption of 26 mW from 1.2 V voltage supply. Layout area is 0.36 mm2.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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