ITM Web Conf.
Volume 48, 2022The 4th International Conference on Computing and Wireless Communication Systems (ICCWCS 2022)
|Number of page(s)||7|
|Section||Passive & Active Components, Circuits & Subsystems|
|Published online||02 September 2022|
Design of High-Power High-Efficiency Broadband GaN HEMT Power Amplifier for S Band Applications using Load-Pull Technique
1 MIET Laboratory, Faculty of Sciences and Techniques of Settat, Hassan 1 st University, Morocco
2 LABTIC, ENSATE, Tetuan, UAE, Morocco
3 ENSA of Kenitra, Ibn Tofail University, Morocco
* Corresponding author: firstname.lastname@example.org
This work reveals the design for broadband high-power high-efficiency GaN HEMT power amplifier, operating in the frequency band ranging from 2.15 GHz to 2.65 GHz. The proposed structure is implemented using Cree GaN HEMT CGH40010 transistor. The high-power and high-efficiency performances over the broadband bandwidth are achieved using the load-pull technique. The proposed power amplifier is unconditionally stable over the entire operating frequency band. With the neatly designed matching circuits, the introduced power amplifier shows an excellent input/output matching. The simulated results show a flat power gain of 15 dB with an output 1-dB compression point of 14 dB. In terms of largesignal performance, the proposed amplifier reaches a saturated output power of 41.3 dBm (~13.6 Watts) with a PAE of 64% and a drain efficiency of 72%. The proposed design achieves an excellent linearity with an output third order two-tone intercept point TOI of 48 dBm.
© The Authors, published by EDP Sciences, 2022
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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