ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||7|
|Section||Solid State and Microwave Devices (1)|
|Published online||27 November 2019|
Broadband push-pull power amplifier design methodology based on the GaN component base for high-performance nonlinear junction detectors
National Research Nuclear University MEPHI, 115409 Kashirskoe shosse 31, Moscow, Russia
* Corresponding author: VAKlokov@mephi.ru
The paper presents a description of design methodology for wide-band push-pull large-signal power amplifier based on GaN transistor with an output power of more than 10 W for high-performance Nonlinear Junction Detectors, which allows achieving optimal convergence of the theoretical model in practice, as well as increasing the efficiency of the power amplifier while maintaining a linear gain characteristic.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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