ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||4|
|Section||Solid State and Microwave Devices (1)|
|Published online||27 November 2019|
Construction of models of microwave transistors when changing the probing signal in the frequency and power range
1 Arzamas Engineering Design Bureau LLC, 607220 Arzamas (Nizhny Novgorod region), Russia
2 Alekseev Nizhny Novgorod State Technical University, 603950 Nizhny Novgorod, Russia
* Corresponding author: email@example.com
It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a transistor with a load is reduced to solving a nonlinear equation with respect to a previously unknown phase difference, after which the load impedance is selected from the complex-conjugate matching condition.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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