ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||7|
|Section||Materials and Technology of Microwave Devices (5a)|
|Published online||27 November 2019|
On the correctness of mathematical models of time-of-flight cathodoluminescence of direct-gap semiconductors
1 Tsiolkovsky Kaluga State University, Phys. and Math. Department, 26 Stepan Razin Street, 248023 Kaluga, Russia
2 Plekhanov Russian University of Economics, Ivanovo Branch, Department of Humanities and Natural Sciences, 53 Dzerzhinsky Street, 153025 Ivanovo, Russia
3 Bauman Moscow State Technical University (National Research University), Kaluga Branch, Department of Automatic Control Systems and Electrical Engineering, 2 Bazhenov Street, 248000 Kaluga, Russia
* Corresponding author: m. firstname.lastname@example.org
Two-dimensional and three-dimensional mathematical models of diffusion and cathodoluminescence of excitons in single-crystal gallium nitride excited by a pulsating sharply focused electron beam in a homogeneous semiconductor material are compared. The correctness of these models has been carried out, estimates have been obtained to evaluate the effect of errors in the initial data on the distribution of the diffusing excitons and the cathodoluminescence intensity.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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