| Issue |
ITM Web Conf.
Volume 30, 2019
29th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|
|
|---|---|---|
| Article Number | 08004 | |
| Number of page(s) | 4 | |
| Section | Nanoelectronics and Nanotechnology (5b) | |
| DOI | https://doi.org/10.1051/itmconf/20193008004 | |
| Published online | 27 November 2019 | |
Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering
Department of Radioelectronics and Laser Technologies, Bauman Moscow State Technical University (National Technological University), Moscow 105005, Russia Federation
* Corresponding author: natasha vetrova@mail.ru
A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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