ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)
|Nanoelectronics and Nanotechnology (5b)
|27 November 2019
Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis
Belarusian State University of Informatics and Radioelectronics, Department of Micro- and Nanoelectronics, 220013 Minsk, Belarus
* Corresponding author: email@example.com
At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon. An analytical model describing the two-dimensional electron gas mobility controlled by these scattering processes as a function of the electron concentration and the temperature was developed and integrated into a device simulator package using a built-in C language interpreter. The electrical characteristics of a simple AlGaAs/GaAs high electron mobility transistor were simulated using either the derived or a conventional bulk mobility model and the results were compared.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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