| Issue |
ITM Web Conf.
Volume 19, 2018
Computer Applications in Electrical Engineering (ZKwE’2018)
|
|
|---|---|---|
| Article Number | 01026 | |
| Number of page(s) | 2 | |
| DOI | https://doi.org/10.1051/itmconf/20181901026 | |
| Published online | 21 September 2018 | |
Measurements and calculations of capacitances of BJT and SJT made of silicon carbide
Gdynia Maritime University, Dept. of Marine Electronics, Morska 83, 81-225 Gdynia, Poland
*
Joanna Szelągowska: j.szelagowska@we.am.gdynia.pl
In the paper the results of capacitance-voltage (C-V) characteristics measurements of the current controlled BJT and SJT transistors were presented, for which a programmable measuring system manufactured by Keithley was used. The results of measurements was compared with results of the calculations obtained by using the commonly used Gummel-Poon model. For comparison, the results of the measurements found in the literature and in the datasheets of the considered devices were presented as well. The temperature impact on the shape of the considered characteristics was also investigated.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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