| Issue |
ITM Web Conf.
Volume 19, 2018
Computer Applications in Electrical Engineering (ZKwE’2018)
|
|
|---|---|---|
| Article Number | 01027 | |
| Number of page(s) | 2 | |
| DOI | https://doi.org/10.1051/itmconf/20181901027 | |
| Published online | 21 September 2018 | |
Evaluation of accuracy of SiC-JFET macromodel
Gdynia Maritime University, Department of Marine Electronics, Morska 83-87 Gdynia, Poland
*
Corresponding author: k.bargiel@we.am.gdynia.pl
In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the characteristics of the transistor has been evaluated, as well.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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