| Issue |
ITM Web Conf.
Volume 30, 2019
29th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|
|
|---|---|---|
| Article Number | 08012 | |
| Number of page(s) | 5 | |
| Section | Nanoelectronics and Nanotechnology (5b) | |
| DOI | https://doi.org/10.1051/itmconf/20193008012 | |
| Published online | 27 November 2019 | |
Experimental study silicon low-dimensional structures for generation of THz radiation
1 Valiev Institute for Physics and Technology RAS, 117218, Moscow, Russia
2 M.V. Lomonosov Moscow State University, 119991, Moscow, Russia
* Corresponding author: miakonkikh@ftian. ru
Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.
© The Authors, published by EDP Sciences, 2019
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