ITM Web Conf.
Volume 30, 201929th International Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’2019)
|Number of page(s)||5|
|Section||Nanoelectronics and Nanotechnology (5b)|
|Published online||27 November 2019|
Experimental study silicon low-dimensional structures for generation of THz radiation
1 Valiev Institute for Physics and Technology RAS, 117218, Moscow, Russia
2 M.V. Lomonosov Moscow State University, 119991, Moscow, Russia
* Corresponding author: miakonkikh@ftian. ru
Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.
© The Authors, published by EDP Sciences, 2019
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